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Monolayer transition-metal dichalcogenide compounds with two-dimensional (2D) layered structures have attracted considerable attention because of their potential applicability as next-generation channel materials for versatile electronic and optoelectronic devices. A novel chemical route for the deposition of high-quality monolayer MoS2 film is proposed with large-area uniformity using ALD.

Two-dimensional electron gas (2DEG) is created at the interface of a heterostructure having ultrathin (~10 nm) binary oxide films deposited by ALD. A lot of electrons are confined and quantized in quantum well, making low-dimensional n-channel. High on-current and low off-current are achieved in 2DEG field effect transistors. Moreover, developments related to p-channel of two-dimensional hole gas (2DHG) are under research to realize post-CMOS.