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Advanced gate stacks

  • Metal gates
  • High-k gate dielectrics
  • Ge and III-V (GaAs, InGaAs, InAs, GaSb, etc) high mobility substrate
  • Advanced electrical characterizations

Resistive random-access memory (RRAM or ReRAM) is a new non-volatile memory type that bears some similarities to CBRAM and phase change memory.
ReRAM has the potential to become the front runner among other non-volatile memories. Compared to PRAM, ReRAM operates at a faster timescale (switching time can be less than 10 ns), while compared to MRAM, it has a simpler, smaller cell structure (less than 8F² MIM stack). Compared to flash memory and racetrack memory, a lower voltage is sufficient and hence it can be used in low power applications.