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작성일 : 12-05-15 20:06
Sug Hun Hong, Jae Hyuck Jang, Tae Joo Park, Doo Seok Jeong, Miyoung Kim, and Cheol Seong Hwang, "Improvement of the current-voltage characteristics of a tunneling dielectric by adopting a Si3N4 /SiO2/Si3N4 multilayer for flash memory application", Appl. P
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   Improvement of the current-voltage characteristics of a tunneling dielectric.pdf (86.8K) [9] DATE : 2012-05-22 21:01:25
Sug Hun Hong, Jae Hyuck Jang, Tae Joo Park, Doo Seok Jeong, Miyoung Kim, and Cheol Seong Hwang
 
"Improvement of the current-voltage characteristics of a tunneling dielectric by adopting a Si3N4 /SiO2/Si3N4 multilayer for flash memory application"
 
Appl. Phys. Lett, 87, 152106 (2005) - Oct.       (IF=3.495)