HOME > Publication > Papers

 
작성일 : 12-05-15 20:04
Hong Bae Park, Moonju Cho, Jaehoo Park, Suk Woo Lee, Tae Joo Park and Cheol Seong Hwang, “Improvements in reliability and leakage current properties of HfO2 gate dielectric films by in-situ O3-oxidation of Si substrate” Electrochem. Soild State. Lett.…
 글쓴이 : 최고관리자
조회 : 688  
   Improvements in Reliability and Leakage Current Properties.pdf (161.2K) [19] DATE : 2012-05-22 21:06:48
Hong Bae Park, Moonju Cho, Jaehoo Park, Suk Woo Lee, Tae Joo Park and Cheol Seong Hwang
 
“Improvements in reliability and leakage current properties of HfO2 gate dielectric films by in-situ O3-oxidation of Si substrate”
 
Electrochem. Solid State. Lett., 7(11), G254-G257 (2004) - Oct.       (IF=1.962)