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작성일 : 18-09-13 14:53
Vrushali S. Dongle, Akshata A. Dongare, Navaj B. Mullani, Pravin S. Pawar, Prashant B. Patil, Jaeyeong Heo, Tae Joo Park and Tukaram D. Dongale. "Development of self-rectifying ZnO thin film resistive switching memory device using successive ionic laye
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   10.1007_s10854-018-9997-9.pdf (2.4M) [3] DATE : 2018-09-13 14:53:29
   https://link.springer.com/article/10.1007%2Fs10854-018-9997-9 [8]

Vrushali S. Dongle, Akshata A. Dongare, Navaj B. Mullani, Pravin S. Pawar, Prashant B. Patil, Jaeyeong Heo, Tae Joo Park and Tukaram D. Dongale.


"Development of self-rectifying ZnO thin film resistive switching memory device using successive ionic layer adsorption and reaction method"


J. Mater. Sci. Mater. Electron., 29:18733-18741 (2018)-Sep        (IF=2.324)