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Total 100
55
Gun Hwan Kim, Jong Ho Lee, Woojin Jeon, Seul Ji Song, Jun Yeong Seok, Jung Ho Yoon, Kyung Jean Yoon, Tae Joo Park, and Cheol Seong Hwang “Optimization of Chemical Structure of Schottky-type Selection Diode for Crossbar Resistive Memory” ACS Appl. Mater. Inter. 4, 5338-5345 (2012) - Oct.       (IF=8.097)
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Hyo Kyeom Kim, Il-Hyuk Yu, Jae Ho Lee, Tae Joo Park, and Cheol Seong Hwang “Scaling of Equivalent Oxide Thickness of Atomic Layer Deposited HfO2 Film Using RuO2 Electrodes Suppressing the Dielectric Deal-Layer Effect” Appl. Phys. Lett. 101, 172910 (2012) - Oct.       (IF=3.495)
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Gun Hwan Kim, Jong Ho Lee, Youngbae Ahn, Woojin Jeon, Seul Ji Song, Jun Yeong Seok, Jung Ho Yoon, Kyung Jean Yoon, Tae Joo Park, and Cheol Seong Hwang   “32 x 32 crossbar array resistive memory composed of stacked Schottky diode and unipolar resistive memory”   Adv. Funct. Mater. 23(11), 1440-1449 (2012) - Oct.       (IF=13.325)
52
Hyung-Suk Jung, Il-Hyuk Yu, Hyo Kyeom Kim, Sang Young Lee, Joohwi Lee, Yujin Choi, Yoon Jang Chung, Nae-In Lee, Tae Joo Park, Jung-Hae Choi, and Cheol Seong Hwang "Reduction of Charge Trapping in HfO2 Film on Ge Substrates by Atomic Layer Deposition of Various Passivating Interfacial Layers." IEEE Trans. Electron. Dev., 59(9), 2350-2356 (2012) - Sep.       (IF=2.620)
51
Deok-Yong Cho, Hyung Suk Jung, Il-Hyuk Yu, Jung Ho Yoon, Hyo Kyeom Kim, Sang Young Lee, Sang Ho Jeon, Seungwu Han, Jeong Hwan Kim, Tae Joo Park, Byeong-Gyu Park, and Cheol Seong Hwang "Stabilization of Tetragonal HfO2 under Low Active Oxygen Source Environment in Atomic Layer Deposition" Chem. Mater. 24(18), 3534 (2012) - Sep.       (IF=9.890)
50
Hyung-Suk Jung, Sang-Ho Jean, Hyo Kyeom Kim, Il-Hyuk Yu, Sang Young Lee, Joohwi Lee, Yoon Jang Chung, Nae-In Lee, Tae Joo Park, Jung-Hae Choi, and Cheol Seong Hwang,   “The impact of carbon concentration on the crystalline phase and dielectric constant of atomic layer deposited HfO2 films on Ge substrate”   ECS J. Solid State Sci. 1(2), N33-N37 (2012) - Jul.       (IF=1.808)
49
Yu Jin Choi, Seok-Jun Won, Hyung-Suk Jung, Sanghyun Park, Deok-Yong Cho, Cheol Seong Hwang, Tae Joo Park* and Hyeong Joon Kim* “Effects of oxygen source on film properties of atomic-layer-deposited La-silicate film using La[N(SiMe3)2]3”  ECS Solid St. Lett. 1(1), N4-N6 (2012) - Jul.   *Corresponding author       (IF=1.142)           
48
Hyo Kyeom Kim, Sang Young Lee, Il-Hyuk Yu, Tae Joo Park, Rino Choi, and Cheol Seong Hwang “Gate engineering in TiN/La/TiN and TiLaN metal layers on atomic layer deposited HfO2/Si” IEEE Electron. Dev. Lett., 33(7), 955 (2012) - Jul.       (IF=3.433)
47
Gun Hwan Kim, Jong Ho Lee, Jeong Hwan Han, Seul Ji Song, Jun Yeong Seok, Jung Ho Yoon, Kyung Jean Yoon, Min Hwan Lee, Tae Joo Park, and Cheol Seong Hwang “Schottky type diode with excellent performance for large integration density of crossbar resistive memory” Appl. Phys. Lett., 100, 213508 (2012) - May.       (IF=3.495)
46
Sang Ho Rha, Jisim Jung, Yoon soo Jung, Yoon Jang Chung, Un Ki Kim, Eun Suk Hwang, Byoung Keon Park, Tae Joo Park, Jung-Hae Choi, and Cheol Seong Hwang “Vertically integrated submicron amorphous-In2Ga2ZnO7 thin film transistor using a low temperature process” Appl. Phys. Lett. 100, 203510 (2012) - May.       (IF=3.495)
45
Hyung-Suk Jung, Hyo Kyeom Kim, Il-Hyuk Yu, Sang Young Lee, Joohwi Lee, Jinho Park, Jae Hyuck Jang, Sang-Ho Jeon, Yoon Jang Chung, Deok-Yong Cho, Nae-In Lee, Tae Joo Park, Jung-Hae Choi, and Cheol Seong Hwang “Properties of atomic layer deposited HfO2 films on Ge substrates depending on process temperature” J. Electrochem. Soc., 159(4), G33-G39 (2012) - Feb.       (IF=3.662)
44
Prasanna Sivasubramani, Tae Joo Park, Brian E. Coss, Antonio Lucero, Jie Huang, Barry Brennan, Robert M. Wallace, Jiyoung Kim, Yu Cao, Debdeep Jena, and Huili Xing “In-situ X-ray photoelectron spectroscopy of trimethyl aluminum and water half-cycle treatments on HF-treated and O3-oxidized GaN substrates” Phys. Status Solidi RRL, 6(1), 22-24 (2012) - Jan.       (IF=3.721)
43
Keum Jee Chung, Tae Joo Park, Prasanna Sivasubramani, Jiyoung Kim and Jinho Ahn “Impact of ozone concentration on atomic layer deposited HfO2 on GaAs”  Microelectron. Eng. 89, 80-83 (2012) - Jan.       (IF=2.020)
42
Bhaswar Chakrabarti, Hee Soo Kang, Barry Brennan, Tae Joo Park, Kurtis D. Cantley, Adam Pirkle, Stephen McDonnell, Jiyoung Kim, Robert M. Wallace and Eric M. Vogel “Investigation of tunneling current in SiO2/HfO2 gate stacks for flash memory applications” IEEE Trans. Electron. Dev., 58, 4189 (2011) - Dec.       (IF=2.620)
41
Hyo Kyeom Kim, Hyung-Suk Jung, Jae Hyuck Jang, Sang Young Lee, Tae Joo Park, Seok Hee Lee, and Cheol Seong Hwang “Dependence of optimized annealing temperature for tetragonal phase formation on the Si concentration of atomic-layer-deposited Hf-silicate film” J. Appl. Phys. 110, 114107 (2011)       (IF=2.176)
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