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Tae Joo Park, Seong Keun Kim, Jeong Hwan Kim, Jaehoo Park, Moonju Cho, Suk Woo Lee, Sug Hun Hong, and Cheol Seong Hwang "Electrical properties of high-k HfO2 films on Si1-xGex substrates" Microelectron. Engineering, 80, 222-225 (2005) - Jun.       (IF=2.020)
Jaehoo Park, Moonju Cho, Seong Keun Kim, Tae Joo Park, Suk Woo Lee, Sug Hun Hong, and Cheol Seong Hwang "Influence of the oxygen concentration of atomic-layer-deposited HfO2 films on the dielectric property and interface trap density" Appl. Phys. Lett., 86, 112907 (2005) - Mar.       (IF=3.495)
Tae Joo Park, Doo Seok Jung, Cheol Seong Hwang, Min Soo Park and Nam-Seok Kang "Fabrication of ultra thin IrO2-top-electrode for improving thermal stability of metal-insulator-metal field emission cathodes" Thin Solid Films, 471, 236 (2005) - Jan.       (IF=1.939)
Jaehoo Park, Moonju Cho, Hong Bae Park, Tae Joo Park, Suk Woo Lee, Sug Hun Hong, Doo Seok Jeong, Chihoon Lee, Jihoon Choi and Cheol Seong Hwang “Voltage induced degradation in self-aligned poly-Si gate n-type field effect transistors with HfO2 gate dielectrics” Appl. Phys. Lett., 85 (24) 5965 (2004) - Dec.       (IF=3.495)
Moonju Cho, Jaehoo Park, Hong Bae Park, Suk Woo Lee, Tae Joo Park, Cheol Seong Hwang, Gi Hoon Jang and Jaehack Jeong “Comparison between atomic-layer-deposited HfO2 films using O3 or H2O oxidant and Hf[N(CH3)2] 4 precursor” Appl. Phys. Lett., 85 (24) 5953 (2004) - Dec.       (IF=3.495)
Hong Bae Park, Moonju Cho, Jaehoo Park, Suk Woo Lee, Tae Joo Park and Cheol Seong Hwang “Improvements in reliability and leakage current properties of HfO2 gate dielectric films by in-situ O3-oxidation of Si substrate”  Electrochem. Solid State. Lett., 7(11), G254-G257 (2004) - Oct.       (IF=1.962)
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