HOME > Publication > Papers

Total 100
25
Jae Hyuck Jang, Tae Joo Park, Jeong Hwan Kim, Kwang Duk Na, Woo Young Park, Miyoung Kim, and Cheol Seong Hwang,  “Role of Carbon on Resistivity and Structure of HfCxNy Films Grown by Low Temperature MOCVD” J. Electrochem. Soc., 156(1), H76-H79 (2008) - Nov.       (IF=3.662)
24
Deok-Yong Cho, Tae Joo Park, Kwang Duk Na, Jeong Hwan Kim, and Cheol Seong Hwang, “Structural disorders in an amorphous HfO2 film probed by x-ray absorption fine structure analysis”  Phys. Rev. B 78, 132102 (2008) - Oct.       (IF=3.813)
23
Tae Joo Park, Jeong Hwan Kim, Jae Hyuck Jang, Kwang Duk Na, Jiyoung Jang and Cheol Seong Hwang “Dependences of nitrogen incorporation behaviors on the crystallinity and phase distribution of atomic layer deposited Hf-silicate films with various Si concentrations” J. Appl. Phys., 104, 054101 (2008) - Sep.       (IF=2.176)
22
Jaewon Song, Him Chan Oh, Tae Joo Park, Cheol Seong Hwang, Sung Yoon, Sang-Hee Park, and Chi-Sun Hwang “The properties of metal-insulator-semiconductor capacitors using the atomic layer deposited ZnO semiconductor and Al2O3 insulator" J. Electrochem. Soc., 155(11), H858-H863 (2008) - Sep.       (IF=3.662)    
21
Minha Seo, Yo-Sep Min, Seong Keun Kim, Tae Joo Park, Jeong Hwan Kim, Kwang Duk Na and Cheol Seong Hwang "Atomic layer deposition of hafnium oxide from tertbutoxytris (ethylmethylamido) hafnium and ozone: rapid growth, high density and thermal stability" J. Mater. Chem. 18, 4324–4331 (2008) - Aug.       (IF=3.515)
20
Jiyoung Jang, Tae Joo Park, Jihwan Kwon, Jae Hyuck Jang, Cheol Seong Hwang and Miyoung Kim “Electron Energy-Loss Spectroscopy Analysis of HfO2 dielectric films on Strained and Relaxed epitaxial-SiGe/Si substrates” Appl. Phys. Lett., 92, 232906 (2008) - Jun.       (IF=3.495)  
19
Tae Joo Park, Jeong Hwan Kim, Jae Hyuck Jang, Kwang Duk Na, and Cheol Seong Hwang “Effective work function tunability and interfacial reactions with underlying HfO2 layer of plasma-enhanced atomic layer deposited TaCxNy films” Appl. Phys. Lett., 92, 202902 (2008) - May.       (IF=3.495)
18
Tae Joo Park, Jeong Hwan Kim, Jae Hyuck Jang, Kwang Duk Na, Minha Seo, and Cheol Seong Hwang, “Effects of surface treatments using O3 and NH3 on electrical properties and chemical structures of high-k HfO2 dielectric films on strained SixGe1-x substrates ” J. Appl. Phys., 103, 084117 (2008) - Apr.       (IF=2.176)
17
Tae Joo Park, Jeong Hwan Kim, Kwang Duk Na and Cheol Seong Hwang “Influence of phase separation by the post-deposition annealing on electrical properties of atomic layer deposited Hf-silicate films with various Si concentrations”  Electrochem. Solid St. Lett., 11 (5),  H121-H123 (2008) - Mar.       (IF=1.962)
16
Kuan Yew Cheong, Jeong Hyun Moon, Tae Joo Park, Jeong Hwan Kim, Cheol Seong Hwang, Hyeong Joon Kim, Wook Bahng and Nam-Kyun Kim “Improved Electronic Performance of HfO2/SiO2 Stacking Gate Dielectric on 4H SiC” IEEE Trans. Electron. Dev., 54 (12) 3409, (2007) - Dec.       (IF=2.620) 
15
Tae Joo Park, Jeong Hwan Kim, Jae Hyuck Jang, Kwang Duk Na, Cheol Seong Hwang, Jong Hoon Kim, Gee-Man Kim, Jae Ho Choi, Kang Joon Choi, and Jae Hak Jeong “Improved electrical performances of plasma-enhanced atomic layer deposited plasma enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma” Appl. Phys. Lett., 91, 252106 (2007) - Dec.       (IF=3.495)   
14
Tae Joo Park, Jeong Hwan Kim, Jae Hyuck Jang, Kwang Duk Na, Minha Seo, and Cheol Seong Hwang “Comparison of electrical properties between high-k HfO2 thin films on strained and relaxed Si1-xGex substrates after post-deposition annealing”  Electrochem. Solid St. Lett., 10(12) G97 (2007) - Oct.          (IF=1.962)
13
Tae Joo Park, Jeong Hwan Kim, Jae Hyuck Jang, MinhaSeo, KwangDuk Na, CheolSeong Hwang  "Enhancement in thermal stability of atomic layer deposited HfO2 films by using top Hf metal layer"  Microelectron. Eng., 84 2226–2229 (2007) - Sep.       (IF=2.020)  
12
Tae Joo Park, Jeong Hwan Kim, Min Ha Seo, Jae Hyuck Jang, and CheolSeongHwang "Improvement of thermal stability and composition changes of atomic layer deposited HfO2 on Si by in situ O3 pretreatment" Appl. Phys. Lett. 90, 152906 (2007) - Apr.       (IF=3.495)
11
Tae Joo Park, Jeong Hwan Kim, Jae Hyuk Jang, Minha Seo and Cheol Seong Hwang, and Jeong Yeon Won “Improvements in the electrical properties of high-k HfO2 dielectric films on Si1-xGex substrates by post deposition annealing” Appl. Phys. Lett., 90, 042915 (2007) - Jan.       (IF=3.495) 
 1  2  3  4  5  6  7