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Bongki Lee, Arabhi Hande, Tae Joo Park, Keum Jee Chung, Jinho Ahn, Mike Rousseau, Daewon Hong, Huazhi Li, Xinye Liu, Deo Shenai, and Jiyoung Kim “Atomic-layer-deposition of LaHfOx Nano-laminates for High- k Gate Dielectric Applications” Microelectron. Eng. 88, 3385-3388 (2011) - Dec.       (IF=2.020)         
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Gun Hwan Kim, Jong Ho Lee, Jun Yeong Seok, Seul Ji Song, Jung Ho Yoon, Kyung Jean Yoon, Min Hwan Lee, Kyung Min Kim, Hyung Dong Lee, Seung Wook Ryu, Tae Joo Park, and Cheol Seong Hwang “Improved endurance of resistive switching TiO2 thin film by hourglass shaped Magnéli filaments” Appl. Phys. Lett. 98, 262901 (2011) - Jun.       (IF=3.495)
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Tae Joo Park, Jeong Hwan Kim, Jae Hyuck Jang, Un Ki Kim, Sang Young Lee, Joohwi Lee, Hyung Suk Jung, Kwang Duk Na, and Cheol Seong Hwang “Improved growth and electrical properties of atomic layer deposited metal-oxide film by discrete feeding method of metal precursor” Chem. Mater. 23(7), 1654-1658 (2011) - Mar.       (IF=9.890)
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Tae Joo Park, Prasanna Sivasubramani, Brian E. Coss, Bongki Lee, Robert M. Wallace, Jiyoung Kim, Mike Rousseau, Xinye Liu, Huazhi Li, Jean-Sebastien Lehn, Daewon Hong, and Deo Shenai “Reduction of residual carbon and nitrogen-related impurities by Al2O3 insertion into atomic-layer-deposited La2O3 thin films” Electrochem. Solid Stat. Lett. 14(5), G23-G26 (2011) - Mar.       (IF=2.321)
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Tae Joo Park, Jeong Hwan Kim, Cheol Seong Hwang, Hyung-Dong Kang, Yeoul-Kyo Chung, and Yong-Soo Oh “Atomic-layer-deposited dielectric thin films on a Cu clad laminate substrate for embedded metal-insulator-metal capacitors applications in printed circuit boards”  J. Electrochem. Soc. 158(1), G1-G8 (2010) - Nov.       (IF=3.662)
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Tae Joo Park, Prasanna Sivasubramani, Brian E. Coss, Hyun-Chul Kim, Bongki Lee, Robert M. Wallace, Jiyoung Kim, Mike Rousseau, Xinye Liu, Huazhi Li, Jean-Sebastien Lehn, Daewon Hong, and Deo Shenai “Effects of O3 and H2O oxidants on C and N-related impurities in atomic-layer-deposited La2O3 films observed by in-situ x-ray photoelectron spectroscopy” Appl. Phys. Lett., 97, 092904 (2010) - Aug.       (IF=3.495)
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Tae Joo Park, Jeong Hwan Kim, Jae Hyuck Jang, Joohwi Lee, Sang Woon Lee, Hyung Suk Jung, Sang Young Lee, Un Ki Kim and Cheol Seong Hwang “Optimized electrical properties and chemical structures of SrTiO3 thin films on Si using various interfacial barrier layers”  J. Electrochem. Soc. 157(10), G216-G220 (2010) -Aug.       (IF=3.662)
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Tae Joo Park, Jeong Hwan Kim, Jae Hyuck Jang, Choong-Ki Lee, Kwang Duk Na, Sang Young Lee, Hyung Suk Jung, Miyoung Kim, Seungwu Han, and Cheol Seong Hwang “Reduction of electrical defects in atomic layer deposited HfO2 films by Al-doping” Chem. Mater., 22, 4175-4184 (2010) - Jul.       (IF=9.890)
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Tae Joo Park, Keum Jee Chung, Hyun Chul Kim, Jinho Ahn, Robert M. Wallace, and Jiyoung Kim “Reduced metal contamination in atomic-layer-deposited high-k films grown using O3 oxidant generated without N2 assistance”  Electrochem. Solid Stat. Lett., 13(8), G65-G67 (2010) - May.          (IF=2.321)
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Kwang Duk Na, Jeong Hwan Kim, Tae Joo Park, Jaewon Song, Cheol Seong Hwang, and Jung Hae Choi “Improved properties of Pt-HfO2 gate insulator-ZnO semiconductor thin film structure by annealing of ZnO layer” Thin Solid Films, 518, 5326-5330 (2010) - Apr.       (IF=1.939)
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Seok-Jun Won, Myung Soo Huh, Sanghyun Park, Sungin Suh, Tae Joo Park, Jeong Hwan  Kim, Cheol Seong Hwang, and Hyeong Joon Kim "Capacitance and Interface Analysis of Transparent Analog Capacitor Using Indium Tin Oxide Electrodes and High-k Dielectrics" J. Electrochem. Soc. 157(7), G170-G175 (2010) - Mar.       (IF=3.662)
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Taeyong Eom, Byung Joon Choi, Seol Choi, Tae Joo Park, Jeong Hwan Kim, Minha Seo, Sang Ho Rha and Cheol Seong Hwang,  “Ge2Sb2Te5 Charge Trapping Nanoislands with High-k Blocking Oxides for Charge Trap Memory”  Electrochem. Solid St. Lett. 12(10) H378-H380 (2009) - Aug.           (IF=2.321)
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Bongki Lee, Tae Joo Park, Arabi Hande, Keum Jee Chung, Moon Jae Kim, Robert M. Wallace, Jiyoung Kim, Xinye Liu, Jaehyung Yi, Mike Rousseau, D. Shenai, and J. Suydam “Electrical Properties of Atomic-layer-deposited La2O3 Films Using a Novel La Formamidinate Precursor And Ozone”  Microelectron. Eng., 86, 1658 (2009) - Jul.       (IF=2.020)
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Tae Joo Park, Jeong Hwan Kim, Jae Hyuck Jang, Joohwi Lee, Sang Woon Lee, Sang Young Lee, Hyung Suk Jung, and Cheol Seong Hwang “Effects of annealing environment on interfacial reactions and electrical properties of ultrathin SrTiO3 on Si” J. Electrochem. Soc., 156(9) G129-G133 (2009) - Jul.       (IF=3.662) 
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Jeong Hwan Kim, Tae Joo Park, Moomju Cho, Jae Huck Jang, Minha Seo, Kwang Duk Na, Cheol Seong Hwang, and Jeong Yeon Won “Reduced Electrical Defects and Improved Reliability of Atomic-Layer-Deposited HfO2 Dielectric Films by In Situ NH3 Injection” J. Electrochem. Soc., 156(5), G48-G52 (2009) - Mar.       (IF=3.662)
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